Photoluminescent Properties of Se-doped GaN
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概要
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The nature of Se donors in GaN was investigated using temperature dependent photoluminescence spectroscopy. Near-bandedge emission of the doped films was investigated at temperatures between 15–300 K@. Based on the temperature dependence of the near-bandedge emission, the Se donor level in GaN was estimated to be $38\pm 4$ meV below the conduction band minimum.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-07-15
著者
-
Park Won
Department Of Bioenergy Science And Technology Bioenergy Research Institute College Of Agriculture A
-
Yi Gyu-chul
Department Of Materials Science And Engineering Pohang University Of Science And Techno1ogy
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Park Won
Department Of Materials Science And Engineering Pohang University Of Science And Technology (postech
-
Yi Gyu-chu
Department Of Materials Science And Engineering Pohang University Of Science And Technology (postech
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