Deposition of High-Quality TiO 2 Films by RF Magnetron Sputtering with an Auxiliary Permanent Magnet
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概要
- 論文の詳細を見る
RF magnetron sputtering with an auxiliary permanent magnet was applied for the deposition of TiO2 films. An auxiliary magnet was installed under a grounded electrode and the magnetic field strength was intensified in the whole discharge space. The film prepared by this sputtering apparatus showed a high value of the refractive index equal to that of bulk TiO2 crystal. The results of several diagnostic techniques showed characteristic changes in the discharge structure. It was shown that a high current of substrate-incident ions brings about growth of high-quality TiO2 films.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-07-30
著者
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OKIMURA Kunio
Fukui National College of Technology
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SHIBATA Akira
Fukui National College of Technology
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Okimura Kunio
Fukui National College of Technology, Geshicho, Sabae, Fukui 916, Japan
関連論文
- Mass and Energy Analyses of Substrate-incident Ions in TiO_2 Deposition by RF Magnetron Sputtering
- Preparation of Rutile TiO_2 Films by RF Magnetron Sputtering
- Role of He Gas Mixture on the Growth of Anatase and Rutile TiO_2 Films in RF Magnetron Sputtering
- Deposition of TiO_2 Films by Reactive Sputtering in Magnetic Field
- Deposition of High-Quality TiO 2 Films by RF Magnetron Sputtering with an Auxiliary Permanent Magnet