Preparation of Rutile TiO_2 Films by RF Magnetron Sputtering

概要

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TiO_2 films were prepared by rf (13.56 MHz) magnetron sputtering using a mixture of Ar and O_2 gases. At a total pressure of 2 mTorr, 100% rutile TiO_2 films were successfully obtained on non heated substrates with rf power of 200 W, while 100% anatase TiO_2 films were deposited at a pressure of 20 mTorr. Spatial profiles of both emission of excited species and plasma parameters were measured by optical emission spectroscopy (OES) and the Langmuir probe method. At a pressure of 2 mTorr, it was found that high-energy electrons are generated at a certain radial position near the cathode surface where the transverse magnetic field is maximum, and the strong localization of plasma was observed. It was proven that the energetic species impinging on the growing film are responsible for the formation of the rutile phase even if the substrate is at room temperature.
社団法人応用物理学会の論文
1995-09-15