Growth Rate and Surface Morphology of Diamond Homoepitaxial Films on Misoriented (001) Substrates
スポンサーリンク
概要
- 論文の詳細を見る
Homoepitaxial films were grown on misoriented diamond(001) substrates using microwave plasma-assisted chemical vapor deposition with a methane and hydrogen gas mixture. The dependence of growth rate and surface morphology on methane concentration, substrate temperature and off-angle was investigated. The growth rate dependence was significant for a growth at a high substrate temperature (1000° C) and low methane concentration (1%), suggesting the surface migration distance of the nanometer order. A flat surface was observed macroscopically and microscopically for films grown on off-substrates at a high substrate temperature and low methane concentration.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1996-09-15
著者
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SHIKATA Shin-ichi
Itami Research Laboratories. Sumitomo Electric Industries, Ltd.
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Shiomi Hiromu
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Akai Shin-ichi
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Tsuno Takashi
Itami Research Laboratories Sumitomo Electric Industries Ltd.
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Kumazawa Yoshiaki
Itami Research Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koyakita, Itami, Hyogo 664, Japan
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Tsuno Takashi
Itami Research Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koyakita, Itami, Hyogo 664, Japan
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Akai Shin-ichi
Itami Research Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koyakita, Itami, Hyogo 664, Japan
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Shikata Shin-ichi
Itami Research Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koyakita, Itami, Hyogo 664, Japan
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Shiomi Hiromu
Itami Laboratory, Sumitomo Electric Industries, Ltd., 1-1-1, Koyakita, Itami, Hyogo 664
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