Reactive Ion Etching of Diamond in O_2 and CF_4 Plasma, and Fabrication of Porous Diamond for Field Emitter Cathodes

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概要

• 論文の詳細を見る

• Reactive ion etching (RIE) of synthetic Ib diamond and chemical vapor deposition (CVD) diamond films in O_2 and CF_4 has been investigated. The large etch rate of up to 2.8 μm/h and etch rate ratios of 15-20 for diamond (100)/Al were obtained at CF_4/O_2=10-20%. Numerous columnar structures of approximately 300 nm length and 10 nm width have been made by etching CVD polycrystalline diamond films in O_2 plasma. The structures made the diamond film "porous". A comparative study of field emission characteristics has been made for as-grown diamond films and porous diamond films. The average turn-on field was in the range of 2-3 V/μm for porous diamond films and 6-8 V/μm for as-grown diamond films.

• 社団法人応用物理学会の論文
• 1997-12-30

著者

• Shiomi Hiromu

  Itami Research Laboratories Sumitomo Electric Industries Ltd.

• Shiomi Hiromu

  Itami Laboratory, Sumitomo Electric Industries, Ltd., 1-1-1, Koyakita, Itami, Hyogo 664

関連論文

• Characterization of Boron-Doped Diamond Epitaxial Films
• High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films
• Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method
• Field-Effect Transistors using Boron-Doped Diamond Epitaxial Films
• Reactive Ion Etching of Diamond in O_2 and CF_4 Plasma, and Fabrication of Porous Diamond for Field Emitter Cathodes
• Growth Rate and Surface Morphology of Diamond Homoepitaxial Films on Misoriented (001) Substrates
• Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film

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