Ge:Ga Far-Infrared Photoconductors for Space Applications
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概要
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We have fabricated 0.5×0.5×0.5-mm3 Ge:Ga photoconductors for the [OI] 63-µm line channel of the Far-Infrared Line Mapper (FILM) on the Infrared Telescope in Space (IRTS). These photoconductors have a high responsivity of 10–20 A/W (ηG of 0.13—0.25) and a good noise equivalent power (NEP) of about $\rm 2\times 10^{-17}\,W/\sqrt{\rm Hz}$ for step change in photon influx at a bias field of 1.8 V/cm and operational temperature of 2 K under a low background photon influx of 1.1 to 2.2×106 photons/s. The photoconductors show slow transient response with a time constant of about 10 s at low temperature under low background conditions, but they have almost no hook response. The responsivity to chopped light decreases as the chopping frequency increases from 7.5 to 210 Hz. We infer that this is due to what we call the “moderately fast response”. Two time constants, τ a∼10 s and τ m∼0.23 s, derived from the two-region model of a Ge:Ga photoconductor, correspond to the slow transient response and the “moderately fast response”, respectively.
- 1996-03-15
著者
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HIROMOTO Norihisa
Communications Research Laboratory
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FUJIWARA Mikio
Communications Research Laboratory (CRL)
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SHIBAI Hiroshi
Institute of Space and Astronautical Science (ISAS)
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Okuda Haruyuki
Institute Of Space And Astronautical Science
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Okuda Haruyuki
Institute of Space and Astronautical Science (ISAS), Sagamihara, Kanagawa 229, Japan
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Shibai Hiroshi
Institute of Space and Astronautical Science (ISAS), Sagamihara, Kanagawa 229, Japan
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