Hole Mobility in Ge : Ga Far-Infrared Photoconductive Semiconductors at Low Temperatures
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1996-09-01
著者
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HIROMOTO Norihisa
Communications Research Laboratory
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FUJIWARA Mikio
Communications Research Laboratory (CRL)
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Hiromoto Norihisa
Communications Research Laboratory (crl)
関連論文
- The IRTS(Infrared Telescope in Space)Mission
- Near-Infrared Camera with a HgCdTe 128×128 Array at the CRL 1.5m Telescope
- [CII]Diffuse Emission Observed by IRTS
- 155 Micron Continuum Emisson from the Galactic Plane near l=50 Degrees Observed by IRTS
- Far-Infrared[C_]Line Observation of the Galactic Plane by IRTS
- Ge:Ga Far-Infrared Photoconductors for Space Applications
- Hole Mobility in Ge : Ga Far-Infrared Photoconductive Semiconductors at Low Temperatures
- Ge:Ga Far-Infrared Photoconductor with Low Compensation
- Ge:Ga Far-infrared Photoconductor with a Low Ga Concentration of 1 × 10^ cm^
- Characteristics of Optical Propagation through Rain for Infrared Space Communications
- The Power Increase and Absolute Frequency-Stabilization of an Optically-Pumped Far Infrared Laser
- Simple System for Generation and Detection of Tunable-Frequency Far Infrared Light
- Ge:Ga Far-Infrared Photoconductors for Space Applications
- Ge:Ga Far-infrared Photoconductor with a Low Ga Concentration of 1×1014 cm-3
- Hole Mobility in Ge:Ga Far-Infrared Photoconductive Semiconductors at Low Temperatures