Ge:Ga Far-infrared Photoconductor with a Low Ga Concentration of 1 × 10^<14> cm^<-3>

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1997-07-01

著者

• HIROMOTO Norihisa

  Communications Research Laboratory

• FUJIWARA Mikio

  Communications Research Laboratory (CRL)

• Fujiwara M

  Communications Research Laboratory

関連論文

• The IRTS(Infrared Telescope in Space)Mission
• Near-Infrared Camera with a HgCdTe 128×128 Array at the CRL 1.5m Telescope
• [CII]Diffuse Emission Observed by IRTS
• 155 Micron Continuum Emisson from the Galactic Plane near l=50 Degrees Observed by IRTS
• Far-Infrared[C_]Line Observation of the Galactic Plane by IRTS
• Ge:Ga Far-Infrared Photoconductors for Space Applications
• Hole Mobility in Ge : Ga Far-Infrared Photoconductive Semiconductors at Low Temperatures
• Ge:Ga Far-Infrared Photoconductor with Low Compensation
• Ge:Ga Far-infrared Photoconductor with a Low Ga Concentration of 1 × 10^ cm^
• Characteristics of Optical Propagation through Rain for Infrared Space Communications
• The Power Increase and Absolute Frequency-Stabilization of an Optically-Pumped Far Infrared Laser
• Simple System for Generation and Detection of Tunable-Frequency Far Infrared Light
• Ge:Ga Far-Infrared Photoconductors for Space Applications
• Ge:Ga Far-infrared Photoconductor with a Low Ga Concentration of 1×1014 cm-3
• Hole Mobility in Ge:Ga Far-Infrared Photoconductive Semiconductors at Low Temperatures

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