Local Fluctuation of Alloy Composition in InGaAsP/GaAs LPE Layers
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概要
- 論文の詳細を見る
The cathodoluminescence (CL) of InGaP and InGaAsP layers grown on GaAs substrates has been studied. The band-to-band CL peak energy varied around naturally formed facets. The alloy composition determined from the X-ray microanalysis also changed around these regions. It was found that the difference in the distribution coefficients of constituent elements brought about this local fluctuation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-08-20
著者
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Ishida Tetsuro
Faculty Of Engineering Department Of Electronic Engineering Yamanashi University:(present Address) D
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Kato Takamasa
Faculty Of Engineering Department Of Electronic Engineering Yamanashi University
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Matsumoto Takashi
Faculty Of Agriculture Shinshu University
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Matsumoto Takashi
Faculty of Engineering, Department of Electronic Engineering, Yamanashi University, Kofu 400
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Ishida Tetsuro
Faculty of Engineering, Department of Electronic Engineering, Yamanashi University, Kofu 400
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