p-Si/n-CdS Heterojunction Solar Cells

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概要

• 論文の詳細を見る

• p-Si/n-CdS heterojunction solar cells having CdS windows were fabricated by evaporating double layers of n-CdS films (n+-CdS layer on n-CdS layer) on p-Si single-crystal wafer. The electric and photoelectric characteristics were measured and discussed. Various preparation parameters affecting the cell characteristics were discussed and the best condition for preparation of cells was found. Open-circuit voltage, short-circuit current and conversion efficiency measured under sunlight of input power intensity of 45 mW cm-2 ware 510 mV, 15 mA cm-2 and 11.3%, respectively.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-07-20

著者

• Hayashi Toshiya

  Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University

• Ema Yoshinori

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Shizuoka University

• Nishimura Kazuhiro

  Department Of Applied Science Faculty Of Engineering Kyushu University

• Hayashi Toshiya

  Department of Electrical Engineering, Shizuoka University, Johoku, Hamamatsu 432

• Nishikura Takehiro

  Department of Electrical Engineering, Shizuoka University, Johoku, Hamamatsu 432

• Nishimura Kazuhiro

  Department of Electrical Engineering, Shizuoka University, Johoku, Hamamatsu 432

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