X-Ray Photoelectron Spectroscopy of Pt/GaAs Interfacial Reactions

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概要

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• Pt/GaAs interfacial reactions were studied by X-ray photoelectron spectroscopy combined with argon ion sputtering. Even at room temperature, the reaction occurred to form a Pt-rich Pt–Ga compound and unreacted As. It was found that Pt interacts with Ga in GaAs at the beginning of the reaction. The top surface of the deposited Pt film was covered with As. Annealing at 200°C formed PtAs2 and the same Pt–Ga compound that was found in the as-deposited state. The top surface was covered with Ga because As and its oxides sublimated during annealing. Annealing at 450°C produced islands of Ga-rich Pt–Ga compound on the sample surface. A ternary compound was formed in the surface region outside the islands.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-02-20

著者

• Kuroda Tsukasa

  The Institute Of Scientific And Industrial Research Osaka University

• Iwakuro Hiroaki

  The Institute Of Scientific And Industrial Research Osaka University

• Kuroda Tsukasa

  The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567

• Iwakuro Hiroaki

  The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567

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• X-Ray Photoelectron Spectroscopy of Pt/GaAs Interfacial Reactions

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