Interfacial Reactions of Ni, Si/Ni and Ni/Si Films on (100)GaAs

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概要

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• The interfacial reactions of Ni, Si/Ni and Ni/Si films on GaAs have been investigated by X-ray photoelectron spectroscopy. In the 450℃-annealed Ni/GaAs system, the interfacial reaction occurred extensively, resulting in formation of the Ni-Ga, Ni-As and Ni-Ga-As compounds. In the annealed Si/Ni/GaAs system, the reaction began at both the Si/Ni and Ni/GaAs interfaces. The Ni silicide formed by intermixing at the Si/Ni interface play a role as a barrier film in preventing out-diffusion of the Ga and As atoms from the Ni/GaAs interface. On the other hand, in the Ni/Si/GaAs system, annealing produced intermixing at the Ni/Si interface but hardly any interfacial reaction at the GaAs substrate.

• 社団法人応用物理学会の論文
• 1990-02-20

著者

• Kuroda Tsukasa

  The Institute Of Scientific And Industrial Research Osaka University

• Iwakuro Hiroaki

  The Institute Of Scientific And Industrial Research Osaka University

• Iwakuro Hiroaki

  The Institute Of Scientific And Industrial Research Osaka University:(present Address)shindengen Ele

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