A Study of CCl_2F_2 Magnetron Ion Etching Damage and Contamination Effects in Silicon

概要

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X-ray photoelectron spectroscopy has been used to evaluate Si surfaces exposed to magnetron plasma in CCl_2F_2 gas. Plasma exposure of Si surfaces results in a contamination film 12-33 Å thick and a damaged layer in the Si substrate. The contamination film consists of C-C, C-F, and C-Cl-F and/or F-F bondings. In addition, the C and F atoms penetrate into the Si substrate. On the other hand, the damaged layer consists of lattice defects and the contamination by the C and F atoms. Furthermore, from electrical measurements on Al/n-Si Schottky diodes, the damage depths are defermined as a function of rf power. It is found that the damage depths correlate with the energy of ions impinging on the Si surface during plasma exposure.
社団法人応用物理学会の論文
1990-05-20