Zinc-Oxide Film Synthesized by ECR Oxygen Plasma
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概要
- 論文の詳細を見る
ZnO films were deposited using an evaporation system with an oxygen ECR plasma. The ECR plasma was produced in an octapole magnetic field with 2.45 GHz microwave. The deposited ZnO films, which have 3.3 eV band gap, were obtained without heating (55°C). Deposition was carried out on substrates set in two regions to examine the effect of ion irradiation; one region was in the octapole field (ion rich atmosphere) and the other was the area outside of it (ion poor atmosphere). The deposition in the ion poor atmosphere gave high quality films. The film structure was analyzed by means of optical spectrophotometer, RHEED, SEM and X-ray diffraction.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-11-20
著者
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Morikawa Takitaro
Faculty Of Engineering Toyo University
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Sakamoto Yuichi
Faculty of Engineering of Toyo University, 2100 Kujirai Kawagoeshi, Saitama 350
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Kokai Hideki
Faculty of Engineering of Toyo University, 2100 Kujirai Kawagoeshi, Saitama 350
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Kashiwagi Kunihiro
Faculty of Engineering of Toyo University, 2100 Kujirai Kawagoeshi, Saitama 350
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Murayama Yoichi
Faculty of Engineering of Toyo University, 2100 Kujirai Kawagoeshi, Saitama 350
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