Electronic States of Zn in GaAs and a Consideration on Its Anomalous Diffusion Phenomena

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概要

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• Electronic states of impurity zinc atoms in gallium arsenides (GaAs) are calculated for model clusters by means of the DV-X$\alpha$ molecular orbital computational method. The result shows that the bond between the Zn in an interstitial site and the surrounding As atoms is weaker than that in a substitutional site, indicating that the Zn in GaAs has a tendency to diffuse through the interstitial sites. It is also found that the interstitial and the substitutional Zn atoms interact rather strongly to form the $\sigma$ bond of $4p$ orbitals. This suggests that the mobility of the substitutional Zn becomes smaller by the bonding interaction with the substitutional Zn which is less mobile. These effects qualitatively explain the strong concentration dependence of zinc diffusion in GaAs.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-10-20

著者

• Adachi Hirohiko

  Department Of Chemistry Hyogo University Of Teacher Education

• Fukushima Kimichika

  Toshiba Corporation

• Fukushima Kimichika

  Toshiba Research and Development Center, 4-1, Ukishima-cho, Kawasaki-ku, Kawasaki 210

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