Fabrication of Submicron GaAs/AlAs Double-Barrier Resonant Tunneling Diodes by Wet Etching with In Droplets as Mask

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概要

• 論文の詳細を見る

• We report the fabrication of submicron GaAs/AlAs double-barrier resonant tunneling diodes (RTDs) using wet etching with In droplets as a mask. Uniform mesas about 400 nm in size were formed and showed a clear resonance feature in current–voltage ($I$–$V$) characteristics, indicating that the mesa worked as a RTD. This simple technique can be applied to the fabrication of various submicron diodes.

• Japan Society of Applied Physicsの論文
• 2007-11-25

著者

• Mano Takaaki

  Quantum Dot Research Center National Institute For Materials Science

• Noda Takeshi

  Quantum Dot Research Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0003, Japan

• Mitsuishi Kazutaka

  Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

• Noda Takeshi

  Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

• Noda Takeshi

  Quantum Dot Research Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

関連論文

• Unstrained GaAs Quantum Dashes Grown on GaAs(001) Substrates by Droplet Epitaxy
• Self-Assembly of GaAs Quantum Wires Grown on (311)A Substrates by Droplet Epitaxy
• Structure of Nanowires Fabricated by Electron Beam Induced Deposition to Connect Self-Assembled Quantum Structures
• Fabrication of Submicron GaAs/AlAs Double-Barrier Resonant Tunneling Diodes by Wet Etching with In Droplets as Mask
• Deterministic Nanometer-Sized Lead Wiring by Atomic Force Microscopy Lithography
• Formation of InGaAs Quantum Disks Using Droplet Lithography

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