Deterministic Nanometer-Sized Lead Wiring by Atomic Force Microscopy Lithography
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概要
- 論文の詳細を見る
We have demonstrated the deterministic wiring of conductive, nanometer-sized Al leads using atomic force microscopy lithography. Conductive Al leads have been fabricated, with a width that can be controlled to be between approximately 65–200 nm and a width-dependent resistance of approximately 1000–3000 $\Omega$. Using this method, we demonstrate the wiring of such Al leads between large electrode pads and a single self-assembled nanostructure at an arbitrary position on a substrate surface. This method may lead to the incorporation of such nanostructures into semiconductor devices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
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Mano Takaaki
Quantum Dot Research Center National Institute For Materials Science
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Noda Takeshi
Quantum Dot Research Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0003, Japan
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Koguchi Nobuyuki
Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Koguchi Nobuyuki
Quantum Dot Research Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Takehana Kanji
Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Yamagiwa Masakazu
Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Kawabe Mitsuo
Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Noda Takeshi
Quantum Dot Research Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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- Fabrication of Submicron GaAs/AlAs Double-Barrier Resonant Tunneling Diodes by Wet Etching with In Droplets as Mask
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