Formation of InGaAs Quantum Disks Using Droplet Lithography
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概要
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We demonstrate a nanolithography technique using droplet epitaxy and wet-chemical etching. The etching process is performed with buried InGaAs quantum well structures on which self-assembled In droplets were grown by molecular beam epitaxy. The In droplets act as a mask for the etching, engendering the formation of submicron-scale mesa structures with InGaAs quantum disks (QDisks). High-yield photoluminescence emissions from single InGaAs QDisks in a mesa structure are observed by micro-photoluminescence measurement. This nanolithography technique is promising for the formation of high-quality mesa structures using simple processes.
- Japan Society of Applied Physicsの論文
- 2007-08-25
著者
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Sakoda Kazuaki
Quantum Dot Research Center National Institute For Materials Science
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Mano Takaaki
Quantum Dot Research Center National Institute For Materials Science
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Noda Takeshi
Quantum Dot Research Center, National Institute for Materials Science, Tsukuba, Ibaraki 305-0003, Japan
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Koguchi Nobuyuki
Quantum Dot Research Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Sakoda Kazuaki
Quantum Dot Research Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Kuroda Takashi
Quantum Dot Research Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Noda Takeshi
Quantum Dot Research Center, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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