Synthesis of Microcrystalline Silicon Films Using High-Density Microwave Plasma Source from Dichlorosilane
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概要
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The growth of microcrystalline (μc-) Si:H:Cl films was studied using a high-density and low-temperature microwave plasma source and a spoke antenna of a SiH2Cl2–H2 mixture. Spectroscopic ellipsometry and cross-sectional transmission electron microscopy revealed that the μc-Si:H:Cl films with a small volume fraction of void were synthesized from SiH2Cl2 rather than μc-Si:H from SiH4 at a high deposition rate of 20 Å/s. These originated from the chemical reactivity of SiHxCly in high-density microwave plasma. The excessive crystallization was suppressed with a small volume fraction of void in SiH2Cl2 plasma compared with that synthesized from SiH4. The fine structure of μc-Si:H:Cl was studied and compared with that of previously studied μc-Si:H synthesized from SiH4 [Jpn. J. Appl. Phys. 38 (1999) 6629].
- 2007-07-25
著者
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Shirai Hajime
Graduate School Of Science And Engineering Saitama University
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Saha Jhantu
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
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Ohse Naoyuki
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
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Hamada Kazu
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
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Haruta Koji
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
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Kobayashi Tomohiro
RIKEN (The Institute of Physics and Chemical Research), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Ishikawa Tatsuo
Horiba Co., Ltd., Higashi Kanda, Chiyoda-ku, Tokyo 101-0031, Japan
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Takemura Yu-ichiro
Japan Science and Technology Agency (JST), 2-1-6 Sengendai, Tsukuba, Ibaraki 305-0047, Japan
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Shirai Hajime
Graduate School of Science and Engineering, Saitama University, 255 Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
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