Depth Profile Characterization of Spin-Coated Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonic acid) Films for Thin-Film Solar Cells during Argon Plasma Etching by Spectroscopic Ellipsometry
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概要
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Depth profiles of the optical constants, carrier mobility, and carrier density of spin-coated poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) films were investigated by real-time characterization by spectroscopic ellipsometry (SE) during argon plasma etching at atmospheric pressure. Spectral analysis revealed that homogeneous etching occurred within 10--15 nm of the top surface, followed by the appearance of a conductive PEDOT phase and surface roughening, which originated from the depth profile of the PEDOT-to-PSS molar concentration ratio. The use of the plasma-etched PEDOT:PSS layer relatively improved the performance of the cupper phthalocyanine (CuPc)/C<sub>60</sub> organic thin-films solar cells as a hole-transport layer with higher optical transmittance by adjusting the plasma etching condition.
- 2011-08-25
著者
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Hayashi Tatsuya
Graduate School Of Human And Environmental Studies Kyoto University
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Ueno Keiji
Graduate School Of Science And Engineering Saitama University
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Shirai Hajime
Graduate School Of Science And Engineering Saitama University
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Ino Tomohisa
Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
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Hayashi Tatsuya
Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
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