Temperature Dependence of Oxidation-Induced Changes of Work Function on Si(001)$2\times1$ Surface Studied by Real-Time Ultraviolet Photoelectron Spectroscopy
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概要
- 論文の詳細を見る
At the initial stage of oxidation on a Si(001)$2\times1$ surface, real-time ultraviolet photoelectron spectroscopy revealed that the O2 dosage dependences of band bending and work function due to a surface dipole layer show a distinct change with increasing temperature from 300 to 600°C in a Langmuir-type adsorption region, while oxygen uptake curves are almost the same at all temperatures examined. In constant to a dual-oxide-species (DOS) model in which the surface migration of adsorbed oxygen is not considered for Langmuir-type adsorption, the observed changes in work function due to the surface dipole layer mean that adsorbed oxygen can migrate on the surface more frequently with increasing temperature, leading to a decrease in the number of adsorbed oxygen atoms bonded at dimer backbond centers and furthermore a significant structural change of the oxide layer.
- Japan Society of Applied Physicsの論文
- 2005-09-10
著者
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Takakuwa Yuji
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Ogawa Shuichi
Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Ogawa Shuichi
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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