Mechanically Stacked GaAs/GaInAsP Dual-Junction Solar Cell with High Conversion Efficiency of More than 31%
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概要
- 論文の詳細を見る
We successfully fabricated high-performance GaAs and GaInAsP (band gap = 0.95 eV) single-junction solar cells with an area of $1\times 1$ cm2. The conversion efficiencies of the GaAs and GaInAsP cells were 25.0 and 19.3%, respectively, under 1-sun air-mass 1.5 global (AM1.5G) conditions. The GaInAsP cell as the bottom cell under the mechanically stacked GaAs top cell also showed a high efficiency of 6.1%, and a total efficiency of 31.1% was achieved for the GaAs/GaInAsP tandem cell. This is the highest efficiency obtained under 1-sun AM1.5G conditions among the dual-junction cells ever reported.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-07-10
著者
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TAKAHASHI Mitsuo
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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TANABE Tatsuya
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Iguchi Yasuhiro
Transmission Devices R&d Laboratories Sumitomo Electric Industries Ltd.
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Yamada Takashi
Transmission Devices R&d Laboratories Sumitomo Electric Industries Ltd.
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Moto Akihiro
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Tanaka So
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Takagishi Shigenori
Transmission Device R&D Laboratories, Sumitomo Electric Industries, LTD., 1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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