Iguchi Yasuhiro | Transmission Devices R&d Laboratories Sumitomo Electric Industries Ltd.
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概要
- Iguchi Yasuhiroの詳細を見る
- 同名の論文著者
- Transmission Devices R&d Laboratories Sumitomo Electric Industries Ltd.の論文著者
関連著者
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Iguchi Yasuhiro
Transmission Devices R&d Laboratories Sumitomo Electric Industries Ltd.
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Akita Katsushi
Semiconductor Technologies R&d Laboratories Sumitomo Electric Industries Ltd.
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Ishizuka Takashi
Semiconductor Technologies R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Katsuyama Tsukuru
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works
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Fujii Kei
Semiconductor Technologies R&D Laboratories,Sumitomo Electric Industries, Ltd
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Balasekaran Sundararajan
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works
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Inada Hiroshi
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works
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Murata Michio
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works
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Inada Hiroshi
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works
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Murata Michio
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works
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Iguchi Yasuhiro
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works
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TAKAHASHI Mitsuo
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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TANABE Tatsuya
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Yamada Takashi
Transmission Devices R&d Laboratories Sumitomo Electric Industries Ltd.
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Moto Akihiro
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Tanaka So
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Takagishi Shigenori
Transmission Device R&D Laboratories, Sumitomo Electric Industries, LTD., 1, Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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Balasekaran Sundararajan
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd, Yokohama works
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Fujii Kei
Semiconductor Technologies R&D Laboratories,Sumitomo Electric Industries, Ltd
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Tanaka S
Superconducting Sensor Laboratory Itami Laboratory
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Tanaka S
International Superconductivity Technol. Center Tokyo Jpn
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Tanaka S
Tokyo Inst. Technol. Tokyo Jpn
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Moto A
Department Of Electrical And Electronic Engineering Kanazawa University
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Takahashi M
Semiconductor Leading Edge Technologies Inc
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Tanabe T
Department Of Electronics And Electrical Engineering Faculty Of Science And Technologies Keio Univer
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Tanabe T
Rhom Co. Ltd. Kyoto Jpn
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Tanabe Takaya
Ntt Cyber Space Laboratories Ntt Corporation
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YAMADA Takashi
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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MOTO Akihiro
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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IGUCHI Yasuhiro
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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TANAKA So
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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TAKAGISHI Shigenori
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Tanabe T
Department Of Electric And Electronic Engineering Ibazuki University
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Moto Akihiro
The Authors Are With The Research Center For Superconductor Photonics Osaka University
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Takahashi Minoru
Ceramic Engineering Research Laboratory Nagoya Institute Of Technology
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Takagishi Shigenori
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd.
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Tanabe Tatsuya
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Ishizuka Takashi
Semiconductor Technologies R&D Laboratories,Sumitomo Electric Industries, Ltd
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Moto Akihiro
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Tanaka So
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
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Takagishi Shigenori
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664-0016, Japan
著作論文
- Mechanically Stacked GaAs/GaInAsP Dual-Junction Solar Cell with High Conversion Efficiency of More than 31%
- 5×5cm^2 GaAs and GaInAs Solar Cells with High Conversion Efficiency
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- $5\times 5$ cm2 GaAs and GaInAs Solar Cells with High Conversion Efficiency
- Mechanically Stacked GaAs/GaInAsP Dual-Junction Solar Cell with High Conversion Efficiency of More than 31%
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes
- Optical properties of InGaAs/GaAsSb type-II quantum well light emitting diodes