Research on Operating Degradation of Pentacene Thin-Film Transistors
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概要
- 論文の詳細を見る
The degradation mechanism of pentacene thin-film transistors under operating mode in contrast to static mode was researched. More rapid degradation was found under operating mode than under static mode. After a systematic analysis, it was concluded that the reasons lie in the change of the interface between the insulator layer and the semiconductor layer, the doping of mobile impurities in the conductive channel, the degradation of the gate insulator, and the heat induced in the operating process.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-07-10
著者
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HU Yan
Key Laboratory of Organic Optoelectronics & Molecular Engineering of the Ministry of Education, Depa
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Liang Yan
Key Lab Of Drug Metabolism & Pharmacokinetics China Pharmaceutical University
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Qiu Yong
Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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Dong Guifang
Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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Wang Liduo
Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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Hu Yan
Key Laboratory of Organic-Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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Dong Guifang
Key Laboratory of Organic-Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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Qiu Yong
Key Laboratory of Organic-Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
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