Relationship between Surface Roughness of Indium Tin Oxide and Leakage Current of Organic Light-Emitting Diode

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概要

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• The relationship between surface roughness of indium tin oxide (ITO) and leakage current of organic light-emitting diode (OLED) was investigated. The surface roughness of ITO was measured with atomic force microscope (AFM) before the device fabrication by using these substrates, OLEDs were fabricated and their electrical properties were measured. leakage current of OLEDs depending on the surface roughness of the substrate. In this letter, we report that leakage currents of OLEDs are highly dependent on the peak-to-valley roughness (Rpv) of ITO.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2003-04-15

著者

• Yoon Myung-hee

  Oled Division Lg Elite Lg Electronics

• Lee Moon-ho

  Department Of Applied Electronics Yeungnam University

• Han Yoon-soo

  Oled Division Lg Elite Lg Electronics

• Kim Ki-beom

  Department Of Applied Electronics Yeungnam University

• Baik Kwang-heum

  Oled Division Lg Elite Lg Electronics

• Tak Yoon-heung

  Oled Division Lg Elite Lg Electronics

• Yoon Myung-Hee

  OLED Division, LG Elite, LG Electronics, 191-1 Kongdandong, Kumi 730-030, Korea

関連論文

• Relationship between Surface Roughness of Indium Tin Oxide and Leakage Current of Organic Light-Emitting Diode
• Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device
• Relationship between Surface Roughness of Indium Tin Oxide and Leakage Current of Organic Light-Emitting Diode
• Numerical Modeling ; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device

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