Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device
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概要
- 論文の詳細を見る
A numerical model of multi-layered organic light emitting diode (OLED) is presented in this paper. The current density-voltage (J-V) model for OLED was performed by using the injection-limited current and bulk-limited current. The mobility equation was based on the field dependent model, so called "Poole-Frenkel mobility model." The accuracy of this simulation was represented by comparing to the experimental results with a variable of EML thickness of multi-layered OLED device. There are two hetero-junction models which should be dealt with in the simulation. The Langevin recombination rate of electron and hole is also calculated through the device simulation.
著者
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Tak Yoon-heung
Oled Division Lg Elite Lg Electronics
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CHOI Hong-Seok
OLED Development Center, LG Display
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AHN Byung-Chul
OLED Development Center, LG Display
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LEE Sang-Gun
OLED Development Center, LG Display
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LEE Seok-Jong
OLED Development Center, LG Display
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HAN Chang-Wook
OLED Development Center, LG Display
関連論文
- Relationship between Surface Roughness of Indium Tin Oxide and Leakage Current of Organic Light-Emitting Diode
- Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device
- Relationship between Surface Roughness of Indium Tin Oxide and Leakage Current of Organic Light-Emitting Diode
- Numerical Modeling ; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device