Modulation Format Dependence of Wavelength Conversion Performance Using Cross Gain Modulation in a Semiconductor Optical Amplifier
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概要
- 論文の詳細を見る
We have investigated the dependence of wavelength conversion performance using cross gain modulation (XGM) in a semiconductor optical amplifier (SOA) on modulation formats. In case of XGM wavelength conversion, it is expected that the difference of bandwidth between return-to zero (RZ) format and non-return-to zero (NRZ) format causes the difference of its characteristics. In this paper, we investigated wavelength conversion characteristics in terms of rise and fall time, and power penalty. It is confirmed that the difference of carrier density change in the SOA causes the different power penalty and rise/fall time characteristics between RZ and NRZ signals.
- Japan Society of Applied Physicsの論文
- 2003-03-01
著者
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Uenohara Hiroyuki
Microsystem Research Center P & I Laboratory Tokyo Institute Of Technology
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Kondo Fumiaki
Microsystem Research Center Tokyo Institute Of Technology
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Takeda Hidekazu
Microsystem Research Center P & I Laboratory Tokyo Institute Of Technology
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Takeda Hidekazu
Microsystem Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
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Kondo Fumiaki
Microsystem Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
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