Hillock Generation on Au Metal in GaAs Metal Semiconductor Field Effect Transistor Fabrication

概要

論文の詳細を見る
Hillock generation on Au metal in GaAs metal semiconductor field effect transistor (MESFET) fabrication has been investigated. Two factors were found to be associated with the hillock generation. One is the residue of resist, which was caused by insufficient ashing after ion-milling. The other is the growth of the Au grain at elevated temperatures. It was confirmed that the residual resist did not exist in the hillocks themselves but in an area other than hillocks. The residual resist is considered to obstruct the growth of the Au grain and only the area that has no residual resist on it may grow to a hillock.
Japan Society of Applied Physicsの論文
2003-11-01