Silicon Nitride Final Passivation for GaAs Metal Semi-Conductor Field Effect Transistors (MESFETs) Packaged in Plastic Mold

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概要

• 論文の詳細を見る

• A highly reliable SiNx final passivation film for GaAs metal semi-conductor field effect transistor (MESFETs) packaged in plastic mold has been developed. The addition of He to N2 for the carrier gas in plasma enhanced chemical vapor deposition (PE-CVD) has been found effective to reduce both stress and pinholes and to significantly improve the resistance to moisture of the SiNx film. Rutherford back scattering (RBS), hydrogen forward scattering (HFS) and FT-IR analyses demonstrated that the SiNx with less pinhole has fewer hydrogen atoms in the film. Regarding the FETs housed in the SOT-89 mold package, no failure was observed up to 1000 h in the 85°C–85% relative humidity (RH) reverse bias test.

• 2003-11-15

著者

• Tosaka Yasuhiro

  Transmission Devices R&d Laboratories Sumitomo Electric Industries Ltd.

• Nakajima Shigeru

  Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan

• Saito Yoshihiro

  Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan

関連論文

• Silicon Nitride Final Passivation for GaAs Metal Semi-Conductor Field Effect Transistors (MESFETs) Packaged in Plastic Mold
• Threshold Voltage Scattering of Ion Implanted GaAs Metal Semi-Conductor Field Effect Transistors
• Hillock Generation on Au Metal in GaAs Metal Semiconductor Field Effect Transistor Fabrication

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