Threshold Voltage Scattering of Ion Implanted GaAs Metal Semi-Conductor Field Effect Transistors

概要

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The $V_{\text{th}}$ scattering of GaAs metal semi-conductor field effect transistors (MESFETs) by ion implantation process were evaluated. In the case of depletion-mode field effect transistors (D-FET) whose gate length ($L_{\text{g}}$) was 0.76 μm, the standard deviation of $V_{\text{th}}$ average ($\langle V_{\text{th}}\rangle$) for 147 wafers was 0.015 V and the average of the $V_{\text{th}}$ standard deviation for each wafer ($\sigma V_{\text{th}}$) was 0.012 V. Regarding the enhancement-mode field effect transistors (E-FET) of 0.44 μm $L_{\text{g}}$, the $V_{\text{th}}$ scattering level was confirmed to be almost the same as that of D-FET. The $\sigma V_{\text{th}}$ of 54,000 D-FET arrays, which demonstrates the $V_{\text{th}}$ micro distribution in a wafer, was 0.011 V. The $V_{\text{th}}$ variation obtained in this study is sufficiently small to achieve a high yield of GaAs LSI.
2003-12-15