Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
スポンサーリンク
概要
- 論文の詳細を見る
We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO tunnel barrier. Spin current was generated using a nonlocal technique, and spin injection signals and Hanle-type spin precession were successfully detected at 300 K, thus proving spin injection with the elimination of spurious signals. The spin diffusion length and its lifetime at RT were estimated to be 0.6 μm and 1.3 ns by the Hanle-type spin precession, respectively.
- 2011-02-25
著者
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SUZUKI Toshio
AIT, Akita Research Institute of Advanced Technology
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Suzuki Yoshishige
Graduate School Of Engineering Science Osaka University
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Oikawa Tohru
Sq Research Center Tdk Corporation
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Shiraishi Masashi
Graduate School Of Engineering Science Osaka Univ.
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Sasaki Tomoyuki
Sq Research Center Tdk Corporation
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Noguchi Kiyoshi
SQ Research Center, TDK Corporation, Saku, Nagano 385-8555, Japan
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Suzuki Toshio
AIT, Akita Research Institute of Advanced Technology, Akita 010-1623, Japan
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Oikawa Tohru
SQ Research Center, TDK Corporation, Saku, Nagano 385-8555, Japan
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