Quantitative Evaluation of Voltage-Induced Magnetic Anisotropy Change by Magnetoresistance Measurement
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概要
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We investigated the voltage-induced perpendicular magnetic anisotropy change in an epitaxial magnetic tunnel junction (MTJ) with an ultrathin FeCo layer. Tunneling magnetoresistance (TMR) curves were measured under various bias voltage applications for different FeCo thicknesses. Clear changes in the shape of TMR curves were observed depending on the voltage-controlled perpendicular magnetic anisotropy. By evaluating the relative angle of two ferromagnetic layers, we could estimate the anisotropy energy change quantitatively. The realization of voltage-induced anisotropy change in the MTJ structure makes it possible to control the magnetization dynamics, leading to a new area of electric-field-based spintronics devices.
- 2011-04-25
著者
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Shinjo Teruya
Graduate School Of Engineering Science Osaka University
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Nozaki Takayuki
Graduate School Of Engineering Science Osaka University
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Suzuki Yoshishige
Graduate School Of Engineering Science Osaka University
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Murakami Shinichi
Graduate School Of Advanced Science And Technology Tokyo Denki University
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Shiota Yoichi
Graduate School Of Engineering Science Osaka University
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Murakami Shinichi
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Suzuki Yoshishige
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Bonell Frederic
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Shiota Yoichi
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Shinjo Teruya
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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