Solution-Processed Single-Walled Carbon Nanotube Transistors with High Mobility and Large On/Off Ratio
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概要
- 論文の詳細を見る
We have examined the device characteristics of solution-processed single-walled carbon nanotube (SWNT) transistors. By using an electrical breakdown, SWNT-field-effect transistors (FETs) exhibited an on/off ratio ($I_{\text{on}}/I_{\text{off}}$) of $10^{4}$ and a field-effect mobility of 3.6 cm2 V-1 s-1 in air, which are comparable to those of other organic FETs. We investigated the detailed mechanism of carrier injection from electrode metals into SWNTs. From the temperature dependence of source–drain current, we evaluated the effective Schottky barrier height for holes to be 170 meV.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-08-15
著者
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Shiraishi Masashi
Graduate School Of Engineering Science Osaka Univ.
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Nakamura Shuichi
Graduate School Of Bioresource And Bioenvironmental Sciences Kyushu University
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Kataura Hiromichi
AIST Nanotech. Res. Inst., 1-1-1 Umezono, Tsukuba, Ibaraki 305-8562, Japan
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Kataura Hiromichi
AIST (National Institute of Advanced Industrial Science and Technology), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan
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Shiraishi Masashi
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Fukao Tomohiro
Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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