Light-induced oxidative deposition of polypyrrole on the back surface in the dark of n-type silicon wafer photocatalysts.

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概要

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• A variety of surface conditions of n-type Si wafers were prepared by etching for different time damaged surfaces that were prepared by lapping with emery papers, and the effect of flaws in the wafer surfaces on photocatalytic deposition behaviors of polypyrrole and silver from acetonitrile containing pyrrole and AgClO<SUB>4</SUB> was investigated. It was found that if the front surface of the wafer to be illuminated contained a fairly high amount of defects and the back surface in the dark was defect-free, oxidative polymerization of pyrrole occurred on the back surface in the dark with the simultaneous deposition of silver on the front surface as long as the diffusion length of positive holes is greater than the thickness of Si wafers.

• 公益社団法人 日本化学会の論文

著者

• Yoneyama Hiroshi

  Department of Applied Chemisrty, Faculty of Engineering, Osaka University

• Yoneyama Hiroshi

  Department of Applied Chemistry, Faculty of Engineering,Osaka University

• Shoji Yoshihiro

  Department of Applied Chemistry, Faculty of Engineering,Osaka University

• Suzuki Kei-ichi

  Department of Applied Chemistry, Faculty of Engineering,Osaka University

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