イオンプレーティングの基礎特性と結晶成長

概要

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Ion plating method was described by D. M. Mattox (1963) and has been examined by various researchers from different point of view. The practical use of ion plating method, whose value is well recognized, has been widely applied to the field of industry.<BR>In this paper, the study of hf ion plating method is experimentally described, and the structure of copper layers, which is grown on silicon wafers and glass plates by the method under various conditions, is determined by the X-ray diffraction method.
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