マイクロ波プラズマを使用した反応性蒸着法による酸化物超伝導体薄膜の低温成長

概要

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A low-temperature growth technique for high Tc superconducting thin films has been developed using microwave plasma assisted reactive evaporation. Superconducting thin films of YBa2Cu3Ox with the critical temperature higher than 80 K have been successfully grown on SrTiO3 and MgO substrates. Emission spectroscopic study of plasma revealed that a part of the metals as well as the oxygen were excited and that the reaction between the vaporized metals and the activated oxygen occurred at the surface of the substrates. Superconducting thin films were also prepared on the Si substrates without a buffer layer. However, their crystallinity, as well as their superconducting properties, were inferior to those of the films on the SrTiO3 and MgO substrates. A TEM study revealed that two types of interfacial layer were formed between the film and the Si substrate: an amorphous silicon oxide layer and a Ba-excess diffusion layer. These amorphous layers are thought to interfere with crystallization of the film deposited on Si.
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