Quantitative Analysis and Influence of CO_2 Absorbed in TMAH Solution for Silicon Etching
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概要
- 論文の詳細を見る
This paper presents the quantitative analysis and influence of CO2 dissolved in TMAH for silicon etching. The etching rate on the (100) plane increases at first and then decreases with the increase of CO2 concentration. The etching rate on the (110) plane decreases monotonously with the increase of CO2 concentration. Although the etching rate on the (110) plane is higher than that on the (100) plane at ordinary conditions, this relationship is reversed at a certain quantity of CO2 dissolution. The etch-stop appears at higher concentration of CO2 dissolution. It was confirmed that changes of the silicon etching characteristics are caused by concentration of carbonate anions. The CO2 dissolution has influence on the (100) plane and no influence on the (110) plane.
- 社団法人 電気学会の論文
- 2003-03-01
著者
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Fujita Takayuki
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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JING Yupeng
Graduate School of Engineering, Himeji Institute of Technology
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MAENAKA Kazusuke
Graduate School of Engineering, Himeji Institute of Technology
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NISHIOKA Hiroshi
Graduate School of Engineering, Himeji Institute of Technology
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IOKU Sunao
Graduate School of Engineering, Himeji Institute of Technology
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FUJITA Takayuki
Graduate School of Engineering, Himeji Institute of Technology
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TAKAYAMA Yoichiro
Graduate School of Engineering, Himeji Institute of Technology
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Ioku Sunao
Graduate School Of Engineering Himeji Institute Of Technology
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Jing Yupeng
Graduate School Of Engineering Himeji Institute Of Technology
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Nishioka H
Graduate School Of Engineering Himeji Institute Of Technology
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Takayama Yoichiro
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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Maenaka Kazusuke
Department Of Electrical Engineering And Computer Sciences Graduate School Of Engineering University
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Maenaka Kazusuke
Graduate School Of Engineering University Of Hyogo
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