Effect of Annealing and Hydrogen Radical Treatment on the Structure of Solution-Processed Hydrogenated Amorphous Silicon Films
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概要
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We investigate the structure distribution of solution-processed (Sol. P) hydrogenated amorphous silicon (a-Si:H) films along a thickness direction and the effect of hydrogen-radical treatment (H-treatment) by Raman spectroscopy. Sol. P a-Si:H films have a stress distribution along the thickness direction, and the degree of the distribution depends on annealing temperature and duration. H-treatment affects stress and short-range order (SRO) of a-Si:H films. These results give us a suggestion about the formation mechanism of Sol. P a-Si:H films through network reconstruction and H-treatment.
- The Japan Society of Applied Physicsの論文
- 2014-02-14
The Japan Society of Applied Physics | 論文
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