Detection of the valence band in buried Co2MnSi–MgO tunnel junctions by means of photoemission spectroscopy
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概要
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This work reports on the detection of the valence band of buried Heusler compounds by means of hard x-ray photoemission spectroscopy. The measurements have been performed on the so-called “half” tunnel junctions that are thin films of Co2MnSi underneath MgO. Starting from the substrate, the structure of the samples is MgO(buffer)–Co2MnSi–MgO(tMgO)–AlOx with a thickness tMgO of the upper MgO layer of 2 and 20 nm. The valence band x-ray photoemission spectra have been excited by hard x rays of about 6 keV energy. The valence band spectra have been used to estimate the mean free path of the electrons through the MgO layer to be 17 nm at kinetic energies of about 6 keV. In particular, it is shown that the buried Co2MnSi films exhibit the same valence density of states as in bulk samples.
- American Institute of Physicsの論文
- 2008-05-16
著者
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Ueda Shigenori
Riken Photodynamics Research Center:(present Address)national Institute For Materials Science Tsukub
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Ueda Shigenori
National Institute For Materials Science Spring-8
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Kobayashi Keisuke
National Institute For Materials Science Spring-8
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YOSHIKAWA Hideki
National Institute for Materials Science
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Kobayashi Keisuke
Nims Beamline Station Spring-8 National Institute For Material Science
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Yokoyama Hisayuki
Department Of Hematology And Rheumatology Tohoku University Graduate School Of Medicine
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Kobayashi Keisuke
Synchrotron X-ray Station At Spring-8 National Institute For Materials Science
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Yamamoto Masafumi
Fachbereich Physik And Forschungszentrum Optimas Technische Universitaet Kaiserslautern Erwin-schroedinger-strasse ...
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