Magnetic and Transport Properties of Nb/PdNi Bilayers
スポンサーリンク
概要
- 論文の詳細を見る
We investigated the superconducting proximity effectin both Nb(35 nm)/PdNi superconductor (S)-ferromagnet (F) bilayer and Nb–Nb(10 nm)/PdNi–Nb (S–SF–S) variable-thickness bridges (VTBs). In Nb(35 nm) PdNi(dF nm) SF bilayer,non-monotonic behavior of the superconducting transition temperature Tc was observed as a function of PdNi thickness, dF. This non-monotonic behavior of Tc can be interpreted from the view point of damped oscillatory superconducting order parameter induced in F-layer, and the effective exchange energy Eex extracted from the data was approximately 150 K. On the other hand, in VTBs, it was found that the superconducting criticalcurrent Ic was monotonically decreased with increasing dF.
- IEEEの論文
著者
関連論文
- Internal electric field influence on tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs junctions
- Double magnetic tunnel junctions with cross-magnetization configurations for electrical detection of domain-wall structures
- Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
- Tunneling anisotropic magnetoresistance in epitaxial CoFe/n-GaAs junctions
- Magnetic and Transport Properties of Nb/PdNi Bilayers
- Analysis of magnetic anisotropy for Co2Cr0.6Fe0.4Al thin films epitaxially grown on GaAs
- Influence of GaAs surface structure on tunneling anisotropic magnetoresistance and magnetocrystalline anisotropy in epitaxial Co50Fe50/n-GaAs junctions
- Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier
- Epitaxial growth of Heusler alloy Co2MnSi/MgO heterostructures on Ge(001) substrates
- Magnetic dichroism in angle-resolved hard x-ray photoemission from buried layers
- Effect of defects in Heusler alloy thin films on spin-dependent tunnelling characteristics of Co2MnSi/MgO/Co2MnSi and Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions
- Surface spin polarization of the nonstoichiometric Heusler alloy Co2MnSi
- Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling
- Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in three-terminal geometry
- Electronic and magnetic properties of Heusler alloy Co2MnSi epitaxial ultrathin films facing a MgO barrier studied by x-ray magnetic circular dichroism
- Fabrication of fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
- X-ray absorption spectroscopy and x-ray magnetic circular dichroism of epitaxially grown Heusler alloy Co2MnSi ultrathin films facing a MgO barrier
- Half-metallic electronic structure of Co2MnSi electrodes in fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions investigated by tunneling spectroscopy (invited)
- Improved tunnel magnetoresistance characteristics of magnetic tunnel junctions with a Heusler alloy thin film of Co2MnGe and a MgO tunnel barrier
- Detection of the valence band in buried Co2MnSi–MgO tunnel junctions by means of photoemission spectroscopy