Epitaxial growth of Heusler alloy Co2MnSi/MgO heterostructures on Ge(001) substrates
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概要
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We prepared Heusler alloy Co2MnSi/MgO heterostructures on single-crystal Ge(001) substrates through magnetron sputtering for Co2MnSi and electron beam evaporation for MgO as a promising candidate for future generation spin-based functional devices. Structural investigations showed that the Co2MnSi/MgO heterostructure was grown epitaxially on a Ge(001) substrate with extremely smooth and abrupt interfaces and showed the L2_[1] structure for the Co2MnSi film. Furthermore, a sufficiently high saturation magnetization (μs) value of 5.1 μB/f.u. at 10 K, which is close to the theoretically predicted μs of 5.0 μB/f.u. for half-metallic Co2MnSi, was obtained for prepared Co2MnSi films.
- 2011-06-27
著者
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Taira Tomoyuki
Fachbereich Physik And Forschungszentrum Optimas Technische Universitaet Kaiserslautern Erwin-schroe
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Yamamoto Masafumi
Fachbereich Physik And Forschungszentrum Optimas Technische Universitaet Kaiserslautern Erwin-schroedinger-strasse ...
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