Atomic imaging of an InSe single-crystal surface with atomic force microscope
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概要
- 論文の詳細を見る
The atomic force microscope was employed to observed in air the surface atomic structure of InSe, one of III-VI compound semiconductors with layered structures. Atomic arrangements were observed in both n-type and p-type materials. The observed structures are in good agreement with those expected from bulk crystal structures. The atomic images became less clear by repeating the imaging process. Wide area imaging after the imaging of small area clearly showed that a mound was created at the spot previously imaged. Journal of Applied Physics is copyrighted by The American Institute of Physics.
- American Institute of Physicsの論文
- 1993-08-01
著者
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UOSAKI Kohei
Division of Chemistry, Graduate School of Science, Hokkaido University
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Uosaki Kohei
Division Of Chemistry Graduate School Of Science Hokkaido University
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Uosaki Kohei
Department Of Chemistry Faculty Of Science Hokkaido University
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