J031052 ナノスケールトランジスタ製造工程における残留応力変動計測([J03105]電子情報機器,電子デバイスの強度・信頼性評価と熱制御(5))

概要

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The embedded strain gauges in a PQC-TEG were applied to the measurement of the change of the residual stress in a transistor structure with a 50-nm wide gate during thin film processing. The change of the residual stress was successfully monitored through the process such as the deposition and etching of thin films. In addition, the fluctuation of the process such as the intrinsic stress of thin films and the height and the width of the etched structures was also detected by the statistical analysis of the measured data. The sensitivity of the measurement was 1 MPa and it was validated that the amplitude of the fluctuation exceeded 100 MPa. This technique is also effective for detecting the spatial distribution of the stress in a wafer and its fluctuation among wafers. It was also confirmed that the final residual stress in a transistor is varied by the fluctuation of both the intrinsic stress in the deposited thin films and the cross-sectional structure of the patterned film. Therefore, it is very important to monitor the stress for assuring the reliability of the thin-film processing. Thus, this embedded strain-gauge technique is very effective for monitoring the fluctuation of the residual stress in a transistor in mass production.
一般社団法人日本機械学会の論文
2011-09-11