OS2403 めっきバンプ強度吻性制御による低応力三次元実装構造の検討(OS24-1 三次元積層半導体チップにおけるシリコン貫通ビア/微細金属接合技術と強度信頼性,OS-24 三次元積層半導体チップにおけるシリコン貫通ビア/微細金属接合技術と強度信頼性)

概要

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In this paper, the dominant structural factors of the local residual stress in a silicon chip are discussed quantitatively based on the results of a three-dimensional finite element analysis and the measurement of the local residual stress in a chip using stress sensor chips. The piezoresistive strain gauges were embedded in the sensor chips. The length of each gauge was 2 μm, and an unit cell consisted of 4 gauges with different crystallographic directions. This alignment of strain gauges enables to measure the tensor component of three-dimensional stress fields separately. Test flip chip substrates were made by silicon chip on which the area-arrayed tin/copper bumps were electroplated. The mechanical properties of the electroplated bumps were varied by changing the electroplating condition and the annealing temperature after the electroplating. It was validated that the residual stress in the silicon chip after the mounting changed drastically depending on the mechanical properties of the bumps and the pitch of the bumps.
一般社団法人日本機械学会の論文
2011-07-16