OS0512 単結晶シリコンの疲労挙動とその環境依存性(OS5-3 疲労損傷,OS-5 材料の疲労挙動と損傷評価1)

概要

論文の詳細を見る
Static strength tests and dynamic fatigue tests were conducted on single crystalline silicon (SCS) thin films under N_2 gas environment at 22℃ and 180℃. It was statistically confirmed that SCS suffers accumulation of fatigue damage under inert environment of N_2 gas, as well as polycrystalline silicon. By comparing the results of SCS and polycrystalline silicon, it is expected that grain boundary is sensitive to temperature leading to a significant increase in static strength with increasing temperature. In fatigue tests, the accumulation of fatigue damage of silicon was accelerated by increasing temperature both in SCS and polycrystalline silicon. It was therefore speculated that fatigue damage is accumulated in crystal, although strengthening is attributable to grain boundary.
一般社団法人日本機械学会の論文
2011-07-16