19pAR-7 Bistability and macroscopic fluctuation in magnetization of Be-doped low-temperature grown GaAs layers
スポンサーリンク
概要
- 論文の詳細を見る
- 一般社団法人日本物理学会の論文
- 2012-08-24
著者
-
Otsuka N.
School of Materials Science, Japan Advanced Institute of Science and Technology
-
Mohamed Mohd
School of Materials Science, JAIST
-
Lam Pham
School of Materials Science, JAIST
関連論文
- Study of localized spins in Be delta-doped GaAs structures (電子デバイス)
- Fabrication and Characterization of Carbon Nanotube Field-Effect Transistors using Ferromagnetic Electrodes with Different Coercivities
- Thermal Degradation of Single-Walled Carbon Nanotubes during Alcohol Catalytic Chemical Vapor Deposition Process
- 27aCE-1 Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature grown GaAs layers
- 19pAR-7 Bistability and macroscopic fluctuation in magnetization of Be-doped low-temperature grown GaAs layers