Study of localized spins in Be delta-doped GaAs structures (電子デバイス)
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概要
- 論文の詳細を見る
The correlation of between the negative magnetoresistance and concentration of localized holes in Be/Si pair delta-doped GaAs structures grown by molecular beam epitaxy (MBE) was investigated. The negative magnetoresistance and anomalous Hall resistance were observed in a high-temperature range. The transition temperature from the negative magnetoresistance to the positive one and the magnitude of negative magnetoresistance are directly correlated to "the concentration of localized holes. Dependence of anomalous Hall resistance on the temperature and applied magnetic field is closely correlated to that of negative magnetoresistance for each sample. The dependence is explained on the basis of a paramagnetic state of interacting localized spins coexisting with itinerant holes in the samples. These results strongly suggest the existence of localized spins in the pair delta-doped structure at high temperatures.
- 社団法人電子情報通信学会の論文
- 2007-06-08
著者
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ISLAM A.
School of Agriculture, Food and Wine, The University of Adelaide
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Noh J.
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Jung D.
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Islam A.
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Islam A.
School Of Agriculture Food And Wine The Univ. Of Adelaide
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Otsuka N.
School of Materials Science, Japan Advanced Institute of Science and Technology
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