27aCE-1 Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature grown GaAs layers

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概要

• 論文の詳細を見る
• 一般社団法人日本物理学会の論文
• 2012-03-05

著者

• Otsuka N.

  School of Materials Science, Japan Advanced Institute of Science and Technology

• Lam P.

  School of Materials Science, JAIST

• Ambri Mohd

  School of Materials Science, JAIST

• Bae K.

  School of Materials Science, JAIST

関連論文

• Study of localized spins in Be delta-doped GaAs structures (電子デバイス)
• 27aCE-1 Cooperative transition of electronic states of antisite As defects in Be-doped low-temperature grown GaAs layers
• 19pAR-7 Bistability and macroscopic fluctuation in magnetization of Be-doped low-temperature grown GaAs layers

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