Fabrication and Characterization of Carbon Nanotube Field-Effect Transistors using Ferromagnetic Electrodes with Different Coercivities
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概要
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We have succeeded in fabricating source and drain structures of carbon nanotube field effect transistor (FET) by adopting ferromagnetic electrodes with different coercive fields. The electrodes were successfully bridged with single-walled carbon nanotubes (SWNTs) by direct growth method. We investigated magnetic properties of electrodes and FET characteristics. The magnetic properties of electrodes survived the chemical vapor deposition process at as high as 800℃, and were found to be qualitatively preserved even at growth time of 20 and 30 min. In addition, the devices also showed good field-effect modulation in conductivity. The device structure could be applied to carbon nanotube spintronics device fabricated by a direct growth method.
- 2010-02-25
著者
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Shikoh Eiji
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Fujiwara Akihiko
School Of Materials Science Japan Advanced Institute Of Science And Technology
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Mohd Asyadi
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Mohamed Mohd
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Azam Mohd
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Akihiko Fujiwara
School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
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Mohamed Mohd
School of Materials Science, JAIST
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