電流-電圧特性測定による半導体デバイス解析

概要

論文の詳細を見る
Basic characteristics of the electronic devices are able to figure out from V-I characteristics. V-I characteristicsanalysis is available for observational study in the semiconductor devices, because this method is able to use anumber of times without destructive. Much information is able to get from this method in many variant conditions,and this information has data of the internal constitution of semiconductor devices. The results of V-I characteristicsmeasurement and parameter analysis from the semiconductor junction of between B and E terminals on transistorshow that internal resistance"R" increases in low current range, and"R"has 3 values pattern. These phenomenaarise from carrier density and the internal constitution of semiconductor devices. These results of analysis show thatthis studying method is quite useful as the internal constitution study in the semiconductor devices. In the future,this studying method will bring the expected results with new functional capability temperature, stress and exposureto light.
大島商船高等専門学校の論文
2008-12-01